we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 679 - 681
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation