Full-band Particle-based Simulation of Germanium-On-Insulator FETs

, , , , ,

Keywords: , , , , , , ,

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.

PDF of paper:

Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 25 - 28
Industry sector: Advanced Materials & Manufacturing
Topics: MEMS & NEMS Devices, Modeling & Applications, Nanoelectronics
ISBN: 0-9728422-8-4