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HomeAuthorsGildenblat G.

Authors: Gildenblat G.

A PSP based scalable compact FinFET model

Smit G.D.J., Scholten A.J., Serra N., Pijper R.M.T., van Langevelde R., Mercha A., Gildenblat G., Klaassen D.B.M., NXP Semiconductors, NL
A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]

Theory and Modeling Techniques used in PSP Model

Gildenblat G., Li X., Wang H., Wu W., Jha A., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US
This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include [...]

Introduction to PSP MOSFET Model

Gildenblat G., Li X., Wang H., Wu W., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US
PSP is the latest and the most advanced compact MOSFET model developed by merging the best features of the two surface potential-based models: SP (devel- oped at The Pennsylvania State University) and MM11 (developed by [...]

Advanced Compact Models for MOSFETs

Watts J., McAndrew C., Enz C., Galup-Montoro C., Gildenblat G., Hu C., van Langevelde R., Miura-Mattausch M., Rios R., Sah C-T, Joint Paper, US
The combination of decreasing MOSFET dimensions and increasing use of MOSFETs for analog and RF application has created the need for advanced compact models for MOSFET circuit design. The first generation of MOSFET models rely [...]

A Surface-Potential-Based Extrinsic Compact MOSFET Model

Gu X., Gildenblat G., Workman G., Veeraraghavan S., Shapira S., Stiles K., Pennsylvania State University, US
This work presents the extrinsic part of a recently developed advanced surface-potential-based compact MOSFET model (SP). At present, it includes a novel engineering gate current model, a substrate current model valid in all regions of [...]

A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling Current

Gu X., Wang H., Gildenblat G., Workman G., Veeraraghavan S., Shapira S., Stiles K., Penn State University, US
The continued aggressive scaling of the gate oxide thickness makes the accurate modeling of the gate tunneling current an important aspect of the MOSFET compact model. This work presents a new compact model of which [...]

Application of Genetic Algorithm to Compact Model Parameter Extraction

Cai X., Wang H., Gu X., Gildenblat G., Bendix P., Penn State University, US
The total number of model parameters in compact MOSFET models is usually between 50 and 300, necessitating an elaborate extraction process. Gradient-based optimization techniques were found to be useful but somewhat limited in their scope. [...]

Substrate Current in Surface-Potential-Based Compact MOSFET Models

Gu X., Wang H., Chen T.L., Gildenblat G., Penn State University, US
A new substrate current model was developed which retains the simplicity of the original one but is applicable to all regions of the MOSFET operation with asymtotically correct behaviors and is well suited for use [...]

Overview of An Advanced Surface-Potential-Based MOSFET Model (SP)

Gildenblat G., Chen T.L., Pennsylvania State University, US
This paper outlines a new surface-potential-based compact MOSFET model (SP) developed at The Pennsylvania State University. The main objective of this work is to find practical engineering solutions of several long-standing problems of surface-potential-based modeling [...]

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