This paper outlines a new surface-potential-based compact MOSFET model (SP) developed at The Pennsylvania State University. The main objective of this work is to find practical engineering solutions of several long-standing problems of surface-potential-based modeling and to use them as a basis for a comprehensive compact MOSFET model. As a result of this approach the physical content of the model is significantly increased while the number of model parameters is reduced without sacrificing the quality of the fit of experimental data.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 657 - 661
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling