A Surface-Potential-Based Extrinsic Compact MOSFET Model

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This work presents the extrinsic part of a recently developed advanced surface-potential-based compact MOSFET model (SP). At present, it includes a novel engineering gate current model, a substrate current model valid in all regions of operation, a physics-based overlap charge model and noise sources. The extrinsic model is developed in a modular form and takes full advantages of the surface-potential-based formulation of SP. It is partially based on the newly developed simplified analytical approximation for the surface potential in the source and drain overlap regions.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 364 - 367
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-1-7