Nano Electronics & Photonic Devices

Highly sensitive organic-inorganic heterojunction flexible photodetectors

Seo J.-H., Oh T.Y., Park J., Zhou W., Ju B.K., Ma Z., University of Wisconsin-Madison, US

Heterostructures formed between inorganic and organic materials could lead to many unique device applications due to their unique physical properties, such as mechanical flexibility, large area, low temperature processability and high performance. Since most n-type [...]

Nanowire GMR Thin Films for Magnetic Sensors

Cox B., Crews N., Louisiana Tech University, US

The discovery of Giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg started a concentrated effort by researchers to comprehend the phenomenon and find suitable applications [1]. We present an elegant technique for [...]

Inherently Radiation Hardened Electronics: A Examination of III-V Nanowire Transistors and Spin-Based Logic Devices

Telesca D., Air Force Research Lab (AFRL), US

This work will present two avenues currently being pursued for inherently radiation hardened electronics. It will examine the current development of III-V all-around gate oxide nano-wire transistors. The carriers in these nanowires have dramatically increased [...]

On the Possibility of Ultra-Low Power Switching in Multilayer Graphene Nanostructures

Dellabetta B., Shumway J., Gilbert M.J., University of Illinois, US

A particularly attractive way to solve the power consumption problem in next generation logic devices is by harnessing collective motion of electrons. While collective phenomena are normally found at low temperatures, recent work suggests it [...]

Current Degradation due to electromechanical coupling in GaN HEMT’s

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

The major reliability concern in GaN HEMT technology is the current degradation due to electromechanical coupling.Electromechanical coupling is the change in the piezoelectric polarization charge in the device with the application of bias. A theoretical [...]

Improved RF Characteristics of Carbon Nanotube Interconnects with Deposited Tungsten Contacts

Vyas A.A., Madriz F., Kanzaki N., Wilhite P., Tan J., Yamada T., Yang C.Y., Santa Clara University, US

Carbon Nanofibers (CNFs) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) are potential next-generation interconnect materials due to their high current capacity. We designed and fabricated a test structure for RF characterization of CNF interconnects [...]

Print Transferrable Large-Area Broadband Membrane Reflectors by Laser Interference Lithography

Seo J.-H., Park J., Zhao D., Yang H., Zhou W., Ju B.K., Ma Z., University of Wisconsin-Madison, US

Large-area broadband reflectors based on photonic crystals can enable a number of optoelectronic and photonics devices. To create nano patterns, nanoimprinting, electron-beam lithography and focused ion beam patterning techniques are commonly used. However, these methods [...]

Optimization of the device design technologies for optimum analog/RF performance of Nanoscale DG MOSFETs

Sharma R.K., Bucher M., Technical University of Crete, GR

Analog/RF performance of new device architecture: graded channel dual material double gate (GCDMDG) is investigated using ATLAS device simulator. A close comparison with double gate (DG), graded channel double gate (GCDG) and dual material double [...]

Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-k/Metal Gate Bulk and SOI FinFETs

Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chang H-T, Li Yiming, National Chiao Tung University, TW

This work studies the metal gate’s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method [...]

Understanding Charge Dynamics in Silicon Dangling Bond Structures for Nanoscale Devices

Livadaru L., Pitters J.L., Taucer M., Wolkow R.A., University of Alberta / NINT, CA

A dangling bond (DB) on a silicon surface atomic has been found to behave as an atomic-scale quantum dot [1-4]. This opens up the possibility of using DBs as building blocks for novel electronic structures, [...]

Investigation of Frequency Dependent Noise Performance Metrices for Gate Electrode Work function Engineered Recessed Channel MOSFET

Agarwala A., Chaujar R., Delhi Technological University, IN

As MOSFET device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This paper predicts the feasibility of a novel design i.e., Gate Electrode Work function Engineered Recessed [...]

The concept of a superconductor of man-made 1D superlattice

Inoue A., Japan Atomic Energy Agency, JP

It is well-known that man-made 1D superlattice structure (for instance, GaAs-Ga1-xAlxAs prepared with alternating epitaxy) exhibits a resonant tunneling phenomenon. The mean free path of an electron is, however limited to the order of 100 [...]

Suppression of Variability in Metal Source/Drain SOI MOSFET with Partial Buried Oxide and δ-doping

Patil G.C., Qureshi S., Indian Institute of Technology Kanpur, IN

Recently, metal source/drain (S/D) dopant-segregated Schottky barrier (DSSB) SOI MOSFET has attracted the attention of researchers due to its planar structure, CMOS compatibility and reduced S/D series resistance at thin SOI film. However, employing dopant-segregation [...]

Fabrication and Characterization of of Nanoscale Tellurium Fuses for Long Term Solid State Data Storage

Pearson A.C., Singh B., Linford M.R., Lunt B.M., Davis R.C., Brigham Young University, US

We have fabricated nanoscale tellurium fuses using electron beam lithography for long term data storage applications. The tellurium fuses contain a narrow resistive region(250 nm to 10 micron). Application of a sufficiently high voltage accross [...]

Synthesis of ZnO Nanosheets by Exposing Zn Film to Oxygen Plasma at Low Temperatures

Yoon J-H, Kangwon National University, KR

We report that the well-defined ZnO nanosheets can be synthesized by directly exposing Zn film to oxygen plasma produced by PECVD method using N2O gas at temperatures below 350 oC. FESEM, XRD, TEM, and PL [...]

Dynamical Tunneling in the Systems of Double Quantum Dots and Rings

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We are modeling the InAs double QDs and QRs, embedded into the GaAs substrate. For the numerical modeling we apply an effective approach] in which the combined effect of strain, piezoelectricity and interband interactions are [...]

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles

Stuchinsky V.A., Kamaev G.N., Efremov M.D., Arzhannikova S.A., Institute of Semiconductor Physics, RU

A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.

MIM Capacitors with stacked dielectrics

Gopalakrishnan H., Kailath B.J., Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, IN

In this work, the characteristics of MIM capacitors with stacked dielectrics are being compared with that with single dielectrics. (100) p-type silicon wafers with resistivity in the range 0.1-0.2 Ωcm have been used as substrate. [...]

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