Investigation of Frequency Dependent Noise Performance Metrices for Gate Electrode Work function Engineered Recessed Channel MOSFET


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As MOSFET device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This paper predicts the feasibility of a novel design i.e., Gate Electrode Work function Engineered Recessed Channel (GEWE-RC) MOSFET when compared with the Recess Channel (RC) MOSFET for high performance applications where noise reduction is a major concern.Noise performance metrices: Minimum noise figure(NFmin),Optimum source impedance(ZOPT=ROPT+JxOPT) and Noise Conductance; as a function of frequency, have been compared for the two devices. ATLAS device simulator is used for this purpose. It is widely accepted that the carrier trapping/detrapping phenomenon into oxide traps is the physical origin of the 1/f and RTS noises in MOSFETs. If a single charge is trapped into an oxide trap, the fixed charge induces the carrier number fluctuations and the mobility fluctuations due to the Coulomb effect. Hence, the carrier transport efficiency is hampered. The noise performance metrices for GEWE-RC MOSFET are better than RC MOSFET as minimum noise figure, optimum impedance and noise conductance are more favourable for the former. Thus, for better noise performance in RF range, GEWE-RC MOSFET is a better choice than RC MOSFET.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 38 - 41
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4665-6275-2