Optimization of the device design technologies for optimum analog/RF performance of Nanoscale DG MOSFETs

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Analog/RF performance of new device architecture: graded channel dual material double gate (GCDMDG) is investigated using ATLAS device simulator. A close comparison with double gate (DG), graded channel double gate (GCDG) and dual material double gate (DMDG) has been done. The inversion layer Lombardi CVT mobility model, SRH, Auger recombination model along with Fermi-Dirac statistics and band gap narrowing has been used. Furthermore, inversion layer quantum effects are taken into account by density gradient quantum correction model. The GCDMDG achieves higher drain current, peak transconductance and higher values of cut-off frequency at lower gate voltage along with better intrinsic gain for an amplifier. This unique configuration is favorable for gate length scaling. Thus, GCDMDG is an ultimate device structure for high speed switching applications and for amplification in the sub-20 nm regime.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 27 - 30
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4665-6275-2