Inherently Radiation Hardened Electronics: A Examination of III-V Nanowire Transistors and Spin-Based Logic Devices


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This work will present two avenues currently being pursued for inherently radiation hardened electronics. It will examine the current development of III-V all-around gate oxide nano-wire transistors. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. In addition, this work will also examine the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 9 - 12
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4665-6275-2