A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 60 - 63
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices