, Kita, K.
, Matsui, E.
, Matsuzawa, N.N.
, Mizutani, T.
, Moriya, S.
, Sasaki, T.
, Sony Corporation, JP
We report a molecular field-effect-transistor employing zinc biladienone (1) as the active element. 1 has not only a rigid disk-shaped core such as porphyrins but also a non-symmetric flexible. The operation of the new transistor, [...]
Break junctions formed by electromigration have been extensively used in the molecular electronics and electrical characterization of atomic or molecular clusters and biological molecules such as deoxyribonucleic acid (DNA)1. However, to obtain a controllable gap [...]
We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field [...]
In the presented work we apply a single subband model for InAs/GaAs QD(QR), where the electron effective mass depends on the confinement energy by the Kane formula. The geometrical parameters of the model are based [...]
Bulk-finFET (fin-shaped field effect transistor) has been viewed as a good candidate for nanoscale VLSI device fabrication and nanoelectronic circuit design [1-5]. The structure features an excellent device characteristics compared with conventional planer structures. In [...]
, Baek, I-B
, Cho, W-J
, Choi, C-J
, Hwang, H.
, Im, K.
, Lee, S.
, Yang, J.H.
, Electronics and Telecommunications Research Institute, KR
UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining [...]
Nanotechnology has been hailed as the “next wave” to replace CMOS as the process of choice to make logic devices using technologies as diverse as carbon nanotube grids, polymer semiconductors and even “wetware” – ionic/electronic [...]
The paper presents a theoretical analysis of controlled singleelectron quantum transport in a two dimensional double quantumdot. The transport is induced by a time dependent magnetic field.From solving the time dependent Schrodinger equation we find [...]
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET [...]
The dimension of electronic devices is rapidly scaling down, and the ratio between surface and bulk atoms therefore increasing. This has the consequence that the interfaces between different parts of the device start to have [...]
The fundamentals of Brownian dynamics and it application are examined. In the development of mathematical model for Brownian particle motion, we integrate the asymmetric potential as well as consider stochastic electric, magnetic, hydrodynamic and thermal [...]
Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall carbon nanotube (SWCNT); its [...]
Recently, a lot of interest has been generated in the area of Macroelectronics with applications such as displays, chemical/biological sensors, photovoltaics and power electronics. Nanobundle network transistors (NBTs) have emerged as a viable, higher performance [...]
Two-dimensional transient analyses of GaN metal-semiconductor field effect transistors (MESFETs) are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a [...]
, Huang, J-S
, Kao, K-S
, Lei, T-F
, Ma, M-W
, National Chiao Tung University, TW
In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby [...]
In this paper the possibilities of modern audio-processing systems have been described. One of the most important tasks is a proper definition of feature vectors. For example, the long-term spectra vector has been chosen as [...]
, Heer, R.
, Kast, M.
, Koeck, A.
, Maier, T.
, Stepper, C.
, ARC Seibersdorf Research GmbH, AT
Electrical and optical nanosensors for biomedical diagnostics and biochemical analytics are developed. The electrical and optical nanosensors employ nanobelt, nanowire and nanogap structures fabricated on silicon-on-insulator (SOI) wafers. In SOI wafers, a thin silicon layer [...]
, James, M.
, Sim, A.
, Singh, N.K.
, Zareie, H.
, The University of New South Wales, AU
A key problem with the existing thin film organic field effect transistor is their large operating voltage (> 20 V) due to the relatively thick (>100 nm) dielectric layer (e.g. SiO2,) which restricts their in [...]
Currently used flame detectors that are composed of discrete UV and IR solid-state components are bulky, sustain temperatures only below 125°C, and are not capable of detecting a multi-band optical signal with high spatial resolution. [...]
Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.
Field sequential color display systems that utilize frustrated total internal reflection to activate pixels offer tremendous advantages over existing display technologies. Among these advantages are display transparency, imaging of infrared and visible light on the [...]
Thin-film-transistors (TFTs) with high mobility and low leakage current are desirable in many applications especially in liquid crystal display (LCD).We have computationally analyzed electrical properties of thin film transistors using three-dimensional (3D) simulation. It is [...]
, Jablonski, G.
, Makowski, D.
, Mielczarek, J.
, Napieralski, A.
, Technical University of Lodz, PL
The paper presents a FPGA-based neutron radiation detector using radiation sensitive SRAM as a detector. Its main component is a PIC16C57-compatible microcontroller, described in VHDL. The system has been designed using hardware redundancy, Hamming error [...]
The problem of designing hardened systems is very important for modern physics. The physics experiences design in linear accelerators and synchrotrons need measurements and control devices, which are under radiation impact. This paper highlights the [...]
Kinetic and mechanistic studies of some alcohols viz., allyl, crotyl, methyl and ethyl alcohol using quinquevalent vanadium in aqueous and anionic micellar media are discussed. Oxidation follows first order kinetics with respect to [V(V)], [Substrate] [...]
One-dimensional inorganic nanowires are expected to play important roles in optoelectronic device applications. The unique properties such as grain boundary and high surface area of these nanostructures are clearly different from the corresponding bulk material. [...]
Several high responsivity, high bandwidth, low bit error ratio (BER) nanoscale Si photodetectors are modeled including metal-semiconductor-metal photodetectors (MSM-PD), MSM-PDs fabricated on silicon-on-insulator substrates, and avalanche photodiodes. The authors have analyzed surface plasmons and other [...]
, Jonsson, F.
, MacDonald, K.F.
, Soares, B.F.
, Zheludev, N.I.
, University of Southampton, UK
Light and electron-beam induced structural transformations in nanoparticles of polymorphic metals provide a paradigm for achieving resonator-less optical memory functionality with picojoule energy requirements. We demonstrate optical memory function with gallium nanoparticles grown by light-assisted [...]
, Paradee, G.
, Xu, J.
, Xu, S.
, Zhang, F.
, Zhu, T.
, Pennsylvania State University, US
In order to incorporate infrared colloidal nanocrystal quantum dots into silicon matrix to develop silicon-based light emitters, we report in this paper the epitaxial growth of PbS shells over PbSe NQDs with monolayer precision. The [...]
A nanoporous alumina template has been developed that provides a practical and flexible method of fabricating semiconductor and metal nanowires on any desired substrate. In situ electrochemical techniques are used to transform this multilayer precursor [...]
In order to investigate the surface charge field on periodic metal arrays
, Raudsepp, M.
, Shan, J.
, van Veggel, F.C.J.M.
, Young, J.F.
, University of Victoria, CA
In an effort to improve photo-stability of IV-VI PbSe and PbS quantum dots (QDs) for application of infrared-based devices, we have synthesized type I core/shell colloidal QDs with PbSe and PbS as the cores, and [...]
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices