In the presented work we apply a single subband model for InAs/GaAs QD(QR), where the electron effective mass depends on the confinement energy by the Kane formula. The geometrical parameters of the model are based on the fabrication process for InAs/GaAs QD/QR, for which the experimental CV and FIR data is available. For the QR geometry configuration a model suggested by Blossey and Lorke was used. The 3D confined energy problem is solved numerically by the finite element method. The obtained results for single energy levels are in good agreement with the CV spectroscopy. The evaluated magnitude of the electron effective mass also agrees with the FIR spectroscopy data. Theoretical estimates for an addition to the ground state energy of QR in the external magnetic field are given and compared with experimental CV data.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 16 - 19
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices