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HomeAuthorsHuang J-S

Authors: Huang J-S

The development of multifunctional nanocomplexs for drug delivery in oral cancer therapy

Huang J-S, Cheng F.Y., Tsai C.H., Shieh D.B., National Cheng Kung University, TW
The development of multifunctional nanocomplexs for drug delivery in oral cancer therapy Oral cancer has been denoted as the sixth most common cancer in the world. Chemotherapy is one of the major therapies for advanced [...]

Postproduction Annealing Effect on Solar Cells Based on Polymer and Zinc Oxide Nanorod Composites

Chou C.Y., Huang J-S, Lin C-F., National Taiwan University, TW
In this work, we investigated the influence of postproduction annealing on the solar cells based on polymer and zinc oxide (ZnO) nanorod composites. We discussed the morphological, crystalline, optical and electrical properties of devices with [...]

Morphological, Crystalline and Photo-luminescent Property of Zinc Oxide Nanorod Array Controlled by Zinc Oxide Sol-gel Thin Film

Huang J-S, Lin C-F., National Taiwan University, TW
Our work provides a systematic study of controllable morphology, crystallinity and photoluminescence (PL) of ZnO nanorod array. Our investigation demonstrates that the pre-treatment conditions of the ZnO sol-gel thin-film have strong influences on the morphology, [...]

Novel FD SOI Devices Structure for Low Standby Power Applications

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW
In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby [...]

Novel FD SOI Devices Structure for Low Standby Power Applications

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW
In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby [...]

Impacts of High-k Offset Spacer on 65-nm Node SOI Devices

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW
In this paper, the 65-nm node SOI devices with high-k offset spacer was investigated. Calculated results show that the high-k offset spacer can effectively increase Ion and reduce Ioff due to the high vertical fringing [...]

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