We report a molecular field-effect-transistor employing zinc biladienone (1) as the active element. 1 has not only a rigid disk-shaped core such as porphyrins but also a non-symmetric flexible. The operation of the new transistor, 16nm-gap device at 298K is shown. We plot Id-Vds and dI/dV characteristics as a function of a gate voltage (Vg) for 1. In this figure, the Vg changes both I-V characteristics and the ‘multi-level negative-differential resistance (NDR)’ is observed. We can consider a switching mechanism using 1 as follows. 1 between the source and drain electrodes are aligned as their core structures facing on the source and drain gold electrodes. When gate voltage is applied, the structure of both 1 molecules on the surface and in-between two electrodes change, because the direction of the permanent dipole moment is aligned in the direction of the gate voltage. These results, which are observation of multi-level NDR at room temperature and NDR can be changed by the gate voltage, can give the impact to the field. Operation and observation at room temperature with the DEVICE not by STM are the big difference. The result can give the promising possibility of molecular devices working at room temperature.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 1 - 4
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices