Papers – Page 28 – TechConnect Briefs

The IMPRINT software: quantitative prediction of process parameters for successful nanoimprint lithography

Kehagias N., Reboud V., Sotomayor Torres C.M., Sirotkin V., Svintsov A., Zaitsev S., IMT RAS, RU

A homogeneous residual layer thickness in nanoimprint lithography (NIL) can be achieved by optimizing the NIL stamp geometry (the distribution of cavities and protrusions, the stamp cavities depth and the stamp thickness) as well as [...]

Process Sensitivity Analysis of a 0.25-um NMOS Transistor Using Two-Dimensional Simulations

Keshavarz A.A., Laurent L.F., Leonardi P.C., STMicroelectronics, US

This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional [...]

The Immersed Surfaces Technology for Reliable and Fast Setup of Microfluidics Simulation Problems

Icardi M., Caviezel D., Lakehal D., ASCOMP GmbH, CH

ASCOMP has developed a new fully automatized version for microfluidics applications in bio-devices, using the IST (Immersed surfaces Technique) technique to map complex components/geometries into a simple rectangular Cartesian grid. Near wall regions are treated [...]

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

Kernstock C., Karner M., Baumgartner O., Gehring A., Holzer S., Kosina H., Global TCAD Solutions, AT

An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows [...]

First self-consistent thermal electron- phonon simulator

Vasileska D., Raleva K., Goodnick S.M., Arizona State University, US

We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on [...]

Simulation of Field-Plate Effects on Lag and Current Collapse in GaN-based FETs

Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]

Test ASIC for Real Time Estimation of Chip Temperature

Szermer M., Kulesza Z., Janicki M., Napieralski A., Technical Univiversity of Lodz, PL

The main goal of this paper is to present in detail the design and operation of an ASIC, which will be used in the research aimed at the development of a real time temperature monitoring [...]

Anomalous Thermomechanical Softening-Hardening Transitions in Micro-oscillators

Sahai T., Bhiladvala R., Zehnder A., Cornell University, US

This work documents and explains a counter-intuitive nonlinear phenomenon, where the laser-detected resonant motion of forced, micromechanical oscillators can be tuned from softening to hardening by increasing the laser power incident on a prestressed silicon [...]

Modeling and Design of Electrostatic Voltage Sensors Based on Micromachined Torsional Actuators

Dittmer A., Dittmer J., Dittmer A., Dittmer J., Judaschke R., Büttgenbach S., Technische Universität Braunschweig, DE

The optimization of design parameters and methods for electrostatic voltage sensors based on torsional actuators is presented. The analytical software model used for this optimization process is discussed and compared to measurement results. Voltage excitation [...]

The static behavior of RF MEMS capacitive switches in contact

Suy H.M.R., Herfst R.W., Steeneken P.G., Stulemeijer J., Bielen J.A., NXP Semiconductors Research, NL

A method is presented in which surface topography characterization is combined with the electrical measurement of the contact mechanics under electrostatic loading. Contact characteristics such as the surface separation versus the applied pressure, and the [...]