Process for Extremely Thin Silicon-on-Insulator Wafer

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We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
Published: February 23, 2003
Pages: 546 - 551
Industry sector: Sensors, MEMS, Electronics
Topicss: Advanced Manufacturing, Nanoelectronics
ISBN: 0-9728422-0-9