A Monte Carlo simulation is used to study Raman scattering and the relative strengths of the polar optical modes in an AlxGa1-xAs system. The dual polar optical modes in the system are incorporated by including two polar optical scattering events. All parameters in the simulation are x dependent to account for the changing band structure. The electron-electron interaction is introduced via the coupling of a molecular dynamics loop. The full q-space phonon distribution is calculated for each time step and this time dependent distribution is then used to extract the temporal Raman signal which is then used to calculate the relative strengths of the polar optical modes. It is found that the relative strength of the polar optical modes is strongly dependent on the electron concentration and the laser pulse energy.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 449 - 452
Industry sector: Sensors, MEMS, Electronics
Topicss: Modeling & Simulation of Microsystems, Nanoelectronics