Papers – Page 8 – TechConnect Briefs

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Wigger S.J., Saraniti M., Goodnick S.M., Arizona State University, US

In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device [...]

Closed-Loop MOSFET Doping Profile Optimization for Portable Systems

Stockinger M., Strasser R., Plasun R., Wild A., Selberherr S., TU Vienna, AT

We present a new closed-loop simulation-based optimization process for a 100 nm MOSFET for portable systems such as subscriber units for wireless communications, yielding an almost double drive performance at equivalent stand-by power when compared [...]

Simulation of the Frequency Limits of SiGe HBTs

Geßner J., Schwierz F., Mau H., Nuernbergk D., Roßberg M., Schipanski D., Technische Universitat Ilmenau, DE

The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the [...]

Offset Analysis in CMOS Magnetotransistors by Numerical Simulation

Metz M., Baltes H., ETH Zürich, CH

Signal offset in magnetotransistors is for the first time analyzed by numerical simulation. Offset needs to be mini-mized to improve the accuracy of low cost CMOS contact-less angle detection systems. The offset is an unwanted [...]

Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices

Sverdrup P.G., Ju Y.S., Goodson K.E., Stanford University, US

The temperature rise in compact silicon devices is strongly underestimated at present by simulations using conventional heat diffusion theory, which is based on the Fourier heat conduction law. This problem is particularly important for devices [...]

A New Analytical Energy Relaxation Time Model for Device Simulation

Palankovski V., Kosina H., Hernandez A., Selberherr S., TU Vienna, AT

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed [...]

Modelling an NMR Probe for Magnetometry

Boero G., Schlaefli D., Besse P.A., Popovic R.S., Swiss Federal Institute of Technology, CH

A model of an NMR magnetometer probe head, based on the Bloch equations, has been developed and implemented in a C-program. The program permits to simulate pulsed and continuous wave NMR experiments with a probe [...]

Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS

Assad F., Ren Z., Vasileska D., Datta S., Lundstrom M.S., Purdue University, US

The continued evolution of Si technology hinges to a large extent on the ability to maintain high on-currents while achieving low off-currents. As we move from sub-micron to nanoscale technology, it is not at all [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices

Saraniti M., Wigger S.J., Goodnick S.M., Illinois Institute of Technology, US

The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]