The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the Hydrodynamic Model are carried out for a variety of different transistor structures to clarify the influence of the vertical transistor design on device performance. Based on the simulation results the validity of the Drift Diffusion Model is discussed and design criteria for RF SiGe HBTs are derived.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 407 - 410
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems