Sensors – Chemical, Physical & Bio – Page 4

Comprehensive Analysis of High Performing Electrochemical Biosensors and Their Applications: II, System Update

Leung S.W., Lai J.C.K., Idaho State University, US

We have mounted 5 different biocatalysts on a sensor platform to examine the performance of this electrochemical sensing system for the detection of different biomolecules/metabolites and environmental important molecules, with such we also compared how [...]

Improved Electric Field Decomposition Capacitance Model with 3-D Terminal and Fringe Components in Sub-28nm Interconnect

Zhang A., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Ma G., Pan J., He J., He X., He Y., Hu G., Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

In this paper, a parasitic capacitance model for a finite single three-dimensional (3-D) wire above an infinite plate in the nano-scale 3-D integrated circuit application is developed based on electric field decomposition (EFD). The capacitance [...]

Numerical Method to Simulate GFET Terahertz Wave Detection

Ma X., He J., He X., Li C., He J., He X., Jun P., Hu G., Ren Y., Wang X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

A numerical method to simulate THz wave generation and detection of the graphene base field effect transistor (GFET) is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab [...]

Resonance Tunneling in Concentric Quantum Rings

Nimmo J., North Carolina Central University, US

In the present work, the phenomenon known as resonance tunneling due to the presents of a magnetic field perpendicular to the surface of double concentric rings (DCQR) is presented. It has shown that in the [...]

Ab-initio tight binding Hamiltonian generation for 1D and 2D MoS2 based Devices

Junghare R.C., Patil G.C., Visvesvaraya National Institute of Technology Nagpur, IN

In this work electronic structure of mono layer MoS2 is analysed by using density functional theory (DFT) and wannierised tight binding approach. The DFT analysis is performed by open source tool Quantum ESPRESSO and wannierised [...]

Effect of Strain on Electronic Transport in Silicene Nanoribbon using Tight Binding Model

Shukla A., Junghare R.C., Patil G.C., Visvesvaraya National Institute of Technology Nagpur, IN

In this paper, we investigate the effect of strain on silicene nanoribbon by using tight binding model.Using appropriate models for silicene, we apply a variable strain to Silicene nanoribbon and analyzed the impact of strain [...]

Utilization of the Flexible Josephson Toroidal Junctions for Self- Powering 150K Super lattice Bits Having Non-volatile Memory Storage in One Device Assembly at Room Temperature

Chen E.T., Thornton J.T., Duh S-H, Kissinger P.T., Advanced Biomimetic Sensors, Inc., US

We report a self-powered multiple flexible Josephson junction-based toroidal (FJJT) array superconductive/mem-element super lattice bit (Sulbit) device for quantum computing with non-volatile memory and non-dissipation energy storage in room temperature in one device assembly developed. [...]

The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development

Bieniek T., Janczyk G., Sitnik A., Messina A., Instytut Technologii Elektronowej, PL

This paper presents the European project REACTION (first and euRopEAn siC eigTh Inches pilOt liNe) [1] [2] which was launched in 2018 to push throughout the new and European first 200mm (8”) SiC Pilot Line [...]

R3-PowerUP – the Driver for key European BCD Technologies Development focused on Smart Power and Power Discretes ICs

Janczyk G., Bieniek T., Institute of Electron Technology, PL

Numerous, growing number of power electronic applications operate below 1kV. The “300mm Pilot Line for Smart Power and Power Discretes” ECSEL project [1] (acronym R3-PowerUP) is focused on volume up-scaling of a set of 90nm [...]

Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation

Chen Y., He J., He X., Li C., Liu J., He J., He X., Jun P., Hu G., Liu J., Ren Y., Ma X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method [...]