Shukla A., Junghare R.C., Patil G.C.
Visvesvaraya National Institute of Technology Nagpur, IN
Keywords: 2D semiconductors, NEGF, silicene, strain, tight binding model
In this paper, we investigate the effect of strain on silicene nanoribbon by using tight binding model.Using appropriate models for silicene, we apply a variable strain to Silicene nanoribbon and analyzed the impact of strain on the transfer characteristics of the silicene nanoribbon field effect transistor. Further, we compared the variations in off-state leakage current (IOFF) and the on-state drive current (ION) with variation in strain. It has been found that, as the strain increases the IOFFof the device decreases.
Journal: TechConnect Briefs
Volume: TechConnect Briefs 2019
Published: June 17, 2019
Pages: 264 - 266
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Sensors - Chemical, Physical & Bio
ISBN: 978-0-9988782-8-7