Nanoelectronics – Page 52 – TechConnect Briefs

Magnetic switch induced electron transport in a double quantum dot

Popsueva V., Førre M., Hansen J.P., University of Bergen, NO

The paper presents a theoretical analysis of controlled singleelectron quantum transport in a two dimensional double quantumdot. The transport is induced by a time dependent magnetic field.From solving the time dependent Schrodinger equation we find [...]

Practical nanotechnology in Electronics

Hammer-Fritzinger D., NanoDynamics Inc., US

Nanotechnology has been hailed as the “next wave” to replace CMOS as the process of choice to make logic devices using technologies as diverse as carbon nanotube grids, polymer semiconductors and even “wetware” – ionic/electronic [...]

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

Im K., Ahn C-G, Yang J.H., Baek I-B, Choi C-J, Lee S., Hwang H., Cho W-J, Choi C-J, Electronics and Telecommunications Research Institute, KR

UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining [...]

Effect of Fin Angle on Electrical Characteristics of Nanoscale Bulk FinFETs

Li Y., Chen W-H, National Chiao Tung University, TW

Bulk-finFET (fin-shaped field effect transistor) has been viewed as a good candidate for nanoscale VLSI device fabrication and nanoelectronic circuit design [1-5]. The structure features an excellent device characteristics compared with conventional planer structures. In [...]

Numerical Modelling of Experimentally Fabricated Inas/Gaas Quantum Rings

Filikhin I., Deyneka E., Vlahovic B., North Carolina Central University, US

In the presented work we apply a single subband model for InAs/GaAs QD(QR), where the electron effective mass depends on the confinement energy by the Kane formula. The geometrical parameters of the model are based [...]

Mobility of Electrons in Rectangular Si Nanowires

Ramayya E., Vasileska D., Goodnick S.M., Knezevic I., Arizona State University, US

We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field [...]

Development of a silicon-based quantum cellular automata cell

Mitic M., Cassidy M.C., Petersson K.D., Gauja E., Starrett R.P., Brenner R., Yang C., Jamieson D.N., Clark R.G., Dzurak A.S., University of New South Wales, AU

Quantum-dot cellular automata (QCA) [1] represent a potential paradigm shift in computation, offering elegant solutions to the critical problems of device density, interconnection and power dissipation. To date QCA cells have been experimentally demonstrated in [...]

Tracking the Formation of a Break Junction Formed by Electromigration using Transmission Electron Microscopy

Dong J., Parviz B.A., University of Washington, US

Break junctions formed by electromigration have been extensively used in the molecular electronics and electrical characterization of atomic or molecular clusters and biological molecules such as deoxyribonucleic acid (DNA)1. However, to obtain a controllable gap [...]

Molecular Switches of a Self-Assembling Helical Biladienone

Matsui E., Matsuzawa N.N., Moriya S., Sasaki T., Hatazawa T., Kita K., Mizutani T., Sony Corporation, JP

We report a molecular field-effect-transistor employing zinc biladienone (1) as the active element. 1 has not only a rigid disk-shaped core such as porphyrins but also a non-symmetric flexible. The operation of the new transistor, [...]

Topic: Nanoelectronics