Nanoelectronics – Page 51 – TechConnect Briefs

Phenyl–Terminated Self Assembled Monolayers on Si(100) for Low Voltage Transistor Applications

Sim A., Harper J., Zareie H., James M., Singh N.K., The University of New South Wales, AU

A key problem with the existing thin film organic field effect transistor is their large operating voltage (> 20 V) due to the relatively thick (>100 nm) dielectric layer (e.g. SiO2,) which restricts their in [...]

Electrical and Optical Nanosensors

Koeck A., Hainberger R., Heer R., Kast M., Maier T., Stepper C., ARC Seibersdorf Research GmbH, AT

Electrical and optical nanosensors for biomedical diagnostics and biochemical analytics are developed. The electrical and optical nanosensors employ nanobelt, nanowire and nanogap structures fabricated on silicon-on-insulator (SOI) wafers. In SOI wafers, a thin silicon layer [...]

Audio Signal Processing Using Mixed Hardware-Software Approach

Rominski A., Ciota Z., Napieralski A., Technical University of Lodz, PL

In this paper the possibilities of modern audio-processing systems have been described. One of the most important tasks is a proper definition of feature vectors. For example, the long-term spectra vector has been chosen as [...]

Novel FD SOI Devices Structure for Low Standby Power Applications

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW

In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby [...]

Numerical Simulation of Drain-Current Transients and Current Compression in GaN MESFETs

Takayanagi H., Itagaki K., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of GaN metal-semiconductor field effect transistors (MESFETs) are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a [...]

Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

Pimparkar N., Guo J., Alam M.A., Purdue University, US

Recently, a lot of interest has been generated in the area of Macroelectronics with applications such as displays, chemical/biological sensors, photovoltaics and power electronics. Nanobundle network transistors (NBTs) have emerged as a viable, higher performance [...]

A Defect Model for Metallic Carbon Nanotubes in Cell-based Logic Circuits

Hashempour H., Lombardi F., Northeastern University, US

Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall carbon nanotube (SWCNT); its [...]

Fluidic Nanoelectronics and Brownian Dyanmics

Lyshevski M.A., Lyshevski S.E., Lyshevski M.A., Lyshevski S.E., Microsystems and Nanotechnologies, US

The fundamentals of Brownian dynamics and it application are examined. In the development of mathematical model for Brownian particle motion, we integrate the asymmetric potential as well as consider stochastic electric, magnetic, hydrodynamic and thermal [...]

Crystalline Magnetotunnel Junctions: Fe-MgO-Fe, Fe-FeOMgO-Fe and Fe-AuMgOAu-Fe

Stilling M., Stokbro K., Flensberg K., Copenhagen University, DK

The dimension of electronic devices is rapidly scaling down, and the ratio between surface and bulk atoms therefore increasing. This has the consequence that the interfaces between different parts of the device start to have [...]

Reproducibility of Silicon Single Electron Quantum Dot Transistor

Hasim U., Sutikno S., Nothern Malaysia University College of Engineering, MY

In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET [...]