Modeling & Simulation of Microsystems – Page 13

Design Optimization of Micromachined High Aspect Ratio 3D On-Chip Solenoid Inductor

Chomnawang N., Lu H., Colinjivadi K., Lee J., University of Texas at Dallas, US

We report the simulation work done by using Sonnet EMÔ on high aspect ratio (1:4 and 1:8) 3D on-chip air-core solenoid inductors. Simulations on 2, 3, and 5-turn inductors with 200 and 400 mm high [...]

RF-MEMS Voltage Tunable Capacitor using Electrostatic Forces

Lee J., Kim Y., Na D., Park S., Kyungpook National University, KR

In this paper, we have proposed a fabrication method of a RF-MEMS voltage tunable capacitor using Au-electroplating technique, which has one movable parallel plate with various structure of beams. We applied an electrostatic method and [...]

Ultra Thin Packaging of the RF-MEMS Devices with Low loss

Park H-W., Park Y.K., Kim C.J., Kim H., Kim Y.K., Kim C.J., Kim H., Kim Y.K., Lee D.J., Park H-W., Park Y.K., Kim C.J., Kim H., Kim Y.K., Ju B.K., Korea Institute of Science and Technology, KR

RF-MEMS devices have the potential for providing an overarching circuit integration technology that can significantly reduce the size, weight and cost. In this research, as ultra thin silicon substrate which has thickness of 50um was [...]

Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology

Lin J., Kiat Seng Y., Jian Guo M., Manh Anh D., Nanyang Technological University, SG

The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are [...]

RF Device Design

Theory of Spin Transport in an n-typed GaAs Quantum Well

Wu M.W., Weng M.Q., Univ. of Science & Technology of China, CN

We perform a many-body investigation of the spin diffusion/transport in an n-doped GaAs QW based on a set of many-body kinetic transport equations. These equations are derived for the spatial inhomogeneous system by using nonequilibrium [...]

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Ahmed S.S., Vasileska D., Arizona State University, US

We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in [...]

Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device

Abebe H., Cumberbatch E., MOSIS, US

A 1-dimensional analytic quantum mechanical effects correction formula for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (DG) model using matched asymptotic expansion techniques. The primary theoretical framework for this [...]

Quantum and Kinetic Simulation Tools for Nano-scale Electronic Devices

Fedoseyev A., Kolobov V., Arslanbekov R., Przekwas A., Balandin A., CFD Research Corporation, US

The progress in LSI technologies has resulted in scaling down semiconductor devices to nano-scale dimensions where kinetic and quantum effects in the carrier transport become crucial for the device performance. The transistor counts on the [...]

A Quantum Waveguide Array Generator For Performing Fourier Transforms

Akis R., Ferry D.K., Arizona State University, US

Recently, quantum computing has gained attention as a possible means of greatly increasing the speed of certain calculations when compared with traditional, binary computing. A key part of many quantum computing algorithms is the performance [...]