Informatics, Modeling & Simulation – Page 12

Effect of Roughness on Wettability of a Surface by Nano-droplets: Correlation With the Slip Length in Nanofluidics

Jabbarzadeh A., The University of Sydney, AU

Surface characteristic govern friction, flow, wettability and many other properties in solid-liquid interfaces. Wettability of surfaces is usually determined by measuring the contact angle of a single droplet put on the surface. Liquid repelling surfaces [...]

Modeling & Simulation at the Nanoscale

GIDL Current and Pass-Gate Body Potential Modeling in 22nm HKMG PD-SOI CMOS

Luo L., Walko J.P., Johnson J.M., Springer S., IBM, US

In a floating PD (partially depleted) SOI (silicon-on-insulator) transistor, the internal DC body potential is determined by the various body current components, mainly including diode current, gate-to-body oxide tunneling current (Igb), impact ionization current (II) [...]

Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation

Ye Y., Zhu Y., He H., He J., Mei J., Cao Y., He H., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN

In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the [...]

An Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements

Lu N., Hook T.B., Johnson J.B., Wermer C., Putnam C., Wachnik R.A., IBM, US

We present a schematic transistor model for multi-finger multi-fin FETs, which reduces an initial complex finFET network to a very simple finFET network. The schematic finFET model is accurate in predicting overall finFET characteristics, including [...]

A Surface-Potential-Based Compact Model of AlGaN/GaN HEMTs Power Transistors

Martin P., Hahe R., Lucci L., CEA-LETI, FR

A new physics based compact model for III-nitride HEMTs developed for SPICE circuit simulation is presented. The HSP model (acronym for HEMT Surface-Potential model) follows a physical approach for power devices modeling, as it was [...]

The Effects of Dwell_time of Monopolar Waveform on Droplet Formation through the Analysis of Fluid Propagation Direction

Wu C.H., Hwang W-S, National Cheng Kung University, TW

For inkjet printing, the fluid dynamics in a capillary tube caused by the movement of the piezoelectric material is essential due to the need to adjust the voltage pulse waveform, but it has seldom been [...]

A simulation study on the property of micro-arrayed negative refractive index material for the energy transfer

Boopalan G., Subramaniam C.K., VIT University, IN

In this paper we discuss in building a micro-arrayed negative refractive index material which enhances the energy transfer between a wireless transmitter and a receiver. We simulate and study the effects of introduction of negative [...]

Integration of memristors with MEMS in different circuit configurations

Almeida S., Zubia D., University of Texas at El Paso, US

The detailed simulation of the recently proposed MEMS-memristor integration is presented. Interestingly, charge transfer is an operating principle that is common to both memristors and certain kinds of MEMS devices such as parallel plate capacitors. [...]

Current-mode Processing Possibilities in HV SoI Integrated Systems

Jankowski M., Napieralski A., Lodz University of Technology, PL

The paper discusses possibilities of current-mode based functional block implementation into signal path of HV SoI voltage-mode circuits. The topic arose as an effect of research on HV SoI ASICs for automotive applications. It turned [...]