Compact Modeling

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Iizuka T., Fukushima K., Tanaka A., Ueno M., Miura-Mattausch M., Hiroshima University, JP

A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared [...]

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Khandelwal S., Fjeldly T.A., NTNU, NO

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

Model the AlGaN/GaN High Electron Mobility Transistors

Wang Y., Tsnghua University, CN

We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and [...]

An analytical 2DEG model considering the two lowest subbands

Zhang J., Zhou X., NTU singapore, SG

A general 2DEG density model that considers the lowest two subbands (subband split) as well as the subthrehold region is derived and validated through comparison with the numerical (exact) solutions. Good agreement is obtained between [...]

Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model

Enz C.C., Mangla A., Chalkiadaki M.-A., Ecole Polytechnique Fédérale de Lausanne (EPFL), CH

The design of analog circuits strongly relies on the accuracy of the models available in the circuit simulators. The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 [...]

BSIM6: Symmetric Bulk MOSFET Model

Chauhan Y.S., Karim M.A., Venugopalan S., Khandelwal S., Niknejad A., Hu C., University of California-Berkeley, US

BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry etc. [...]

Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs

Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US

MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]

The Application of RESCUER Software to Modelling of Coupled Problems in Modern Devices

Zubert M., Napieralski A., Technical University of Lodz, PL

The simulation of modern electronic devices requiring taking into account physical phenomena of different nature such as electrical, mechanical, thermal or fluidic ones. The most of processes are governed by multidimensional partial differentialalgebraic equations (PDAEs). [...]

Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region

Shihuan L., Nanyang Technology University, SG

In the past decades, as predicted by the Moore’s law, the IC circuit density increases to reduce the cost per chip and to achieve better performance. With critical device dimensions scaling down, the electrical field [...]