Sensors, MEMS, Electronics – Page 38

Threshold Voltage Model of Hetero Gate Dielectric-Dual Material Gate-GAA-Tunnel FET

Madan J., Gupta R.S., Chaujar R., Delhi Technological University, IN

In this paper, a hetero gate dielectric, dual material gate, gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been proposed. An analytical model for the same has been developed to examine the band to [...]

The Heat transfer in Fin-FET transistor

Zubert M., Janicki M., Raszkowski T., Samson A., Napieralski A., Lodz University of Technology, PL

The electro-thermal analysis is one of the most important development steps in the professional design of analogue submicron electric ICs, power modules design process as well as modern nanostructures. This analysis is useful to power [...]

Modeling the effect of the increase in the actuation voltage on the dynamic behavior of a RF MEMS switch

Jamshidzadeh M., Casals J., Assistant Professor, IR

Abstract—In the past few years many reports have demonstrated the development of RF-MEMS switches considering the mechanical, electrical and chemical behaviors separately. However there are a few works which address the whole aspects of RF-MEMS [...]

Novel Nanoeletromechanical Switches for VLSI Power Integrity Improvement

Zhang R., Saab D., Masoo M., Case Western Reserve University, US

Complementary Metal Oxide Semiconductor(CMOS)is facing extreme difficulties to realize energy efficient designs while the scaling of channel length has been being at the same pace in the past several decades.In this paper,we presented a novel [...]

Application of Dual-Phase-Lag Model for Thermal Analyses of Electronic Nanostructures

Janicki M., Zubert M., Samson A., Napieralski A., Lodz University of Technology, PL

This paper presents the Dual-Phase-Lag (DPL) equation as a possible candidate to model heat transfer processes in electronic nanostructures. The analyses presented in this paper are carried out for a thin one-dimensional slab heated on [...]

Modeling & Simulation of Microsystems

Modeling of Electromagnetic Phenomena Inside Modern Integrated Semiconductor Structures

Zubert M., Jankowski M., S. Nowak P., Raszkowski T., Samson A., Napieralski A., Lodz University of Technology, PL

The modeling and simulation of electromagnetic phenomena can be useful in modern ICs. This is an important issue, because of the direction of development of new semiconductor technologies. The distance between devices constantly decreases, while [...]

Nanoelectronic Structural Information with Scanning Probe Microscopes

Kopanski J., You L., Ahn J.J., Obeng Y., National Institute of Standards and Technology, US

Scanning probe microscopes (SPMs) have remarkable sensitivity to the surface. The atomic force microscope (AFM) can measure surface topography and the scanning tunneling microscope (STM) can interrogate the electrical density of states, both with atomic [...]

Acetylcholine Repairs the Amyloid-beta Damage on Brain Circuitry and Memory Loss From a “Mutated Biomimetic Acetylcholinesterase” Neuronal Memcapacitor During Slow-Wave Sleeping

Thornton J., Mulchi Jr. C., Kissinger P.T., Chen E.T., Advanced Biomimetic Sensors, Inc., US

Amyloid-beta (A) plaque accumulation in the brain has been recognized to be associated with Alzheimer’s. Using artificial neuronal devices under controlled conditions, step-by-steps mimicking the A damages to neuronal circuitry is desirable, because of convenience [...]

Impact of High-k gate oxide on intrinsic device Performance of Junctionless Transistor (JLT)

Borse H.S., Jawake A.V., Aher S.R., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., Bormane D.S., JSPM’s Rajarshi Shahu College of Engineering, IN

Junctionless transistor (JLT) attracts the researchers due to its advantages over conventional MOSFET’s namely high scalability, simple process flow, and low thermal budget. However, scaling of JLT below 20 nm regime results increase in off [...]