Modeling of Electromagnetic Phenomena Inside Modern Integrated Semiconductor Structures

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The modeling and simulation of electromagnetic phenomena can be useful in modern ICs. This is an important issue, because of the direction of development of new semiconductor technologies. The distance between devices constantly decreases, while ever higher operating frequencies are utilized. In 3D integrated systems all bulk wafers are exposed one to another at distances as small as tens of μm, which makes them even more vulnerable to electromagnetic disturbances. The development of 3D integrated systems is a revolutionary step, which introduces a third dimension to the generally planar semiconductor structures. Unfortunately, this also introduces new level of design complication. Facing such changes, it is not possible to properly design advanced integrated 2D and 3D systems. The authors will propose an modeling and simulation method of electromagnetic phenomena inside integrated circuit structures. Due to higher efficiency in comparison to existing solutions, the research outcome should enable fast and precise EM simulations of complete functional blocks of IC taking into account its electrical design and layout geometry. FETD with Faedo-Galerkin approximation for equation formulation as-well-as a high order WETD and WENO methods will be applied in this purpose. The system complexity will be reduced using separate kernel splitting methods.

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Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 234 - 237
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 978-1-4987-4730-1