In this paper, a hetero gate dielectric, dual material gate, gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been proposed. An analytical model for the same has been developed to examine the band to band tunneling, surface potential and the device behavior. The parabolic approximation is used to solve the 2-D Poisson equation with appropriate boundary conditions to evaluate analytical expressions for surface potential and electric field. The analytical results obtained from the proposed model shows excellent agreement with the simulated results obtained with the ATLAS device simulator. Lowering in tunneling barrier width has been obtained with enhanced gate voltage, due to higher electric field at the tunneling junction, thus sought out the major roadblock (Lower tunneling current)of TFET.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 254 - 257
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation