Abstract—In the past few years many reports have demonstrated the development of RF-MEMS switches considering the mechanical, electrical and chemical behaviors separately. However there are a few works which address the whole aspects of RF-MEMS in a single model. In this paper we present such a numerical model to characterize the dynamic behavior of RF-MEMS switches. The goal is to analyze the effect of an increase in the actuation voltage on the insertion losses of the RF switches. The numerical results will be compared to the experimental data obtained from previous prototypes.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 246 - 249
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation