Sensors, MEMS, Electronics – Page 253

Electronic Properties of Gaphitic Surfaces with Adsorbed Aromatic Amino Acids

Roman C., Ciontu F., Courtois B., Tima Laboratory, FR

The electronic properties of aromatic amino acids physisorbed on graphene are investigated in view of establishing if carbon nanotube transconductance sensors can respond to this type of chemical stimuli. Several conclusions are drawn regarding both [...]

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

Entner R., Gehring A., Kosina H., Grasser T., Selberherr S., TU Vienna, AT

In this work a new approach for modeling gate leakage currents for memory cells which are highly degraded is proposed. In thicker dielectrics which are subject to high field stress and can therefore have a [...]

Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)

Khan H., Ahmed S.S., Vasileska D., Arizona State University, US

Novel device structures such as dual gate SOI, Ultra thin body SOI, FinFETs, etc. have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. In this paper, we use a semi-classical [...]

Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime

Amtablian S., Barraud S., CEA-DRT/LETI, FR

A 200 word (or less) text only summThe fabrication of Fully-Depleted strained-Si directly on insulator (SSOI) MOSFET was recently demonstrated. The combination of strain-induced transport property with the scaling advantage of ultra-thin body devices is [...]

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

Nguyen C.D., Jungemann C., Meinerzhagen B., Technical University Braunschweig, DE

An Improved Modified Local Density Approximation (IMLDA) model for the electron inversion layer in strained Si-nMOSFETs is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance without increasing the [...]

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Wittmann R., Puchner H., Hinh L., Ceric H., Gehring A., Selberherr S., Vienna University of Technology, AT

The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time [...]

Sector: Sensors, MEMS, Electronics

Electronic Properties of Gaphitic Surfaces with Adsorbed Aromatic Amino Acids

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)

Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures

A Physically-Based Electron Mobility Model for Strained Si Devices