Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

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The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time NBTI degradation was simulated up to 10 years in order to estimate the transistor lifetime under typical chip operation conditions.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 29 - 32
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Advanced Manufacturing, Nanoelectronics
ISBN: 0-9767985-2-2