Papers – Page 998 – TechConnect Briefs

Coupled Multiphysics and Chemistry Simulations of PCR Microreactors with Active Control

Athavale M.M., Chen Z.J., Furmanczyk M., Przekwas A.J., CFD Research Corporation, US

High-fidelity simulation tools that couple fluid flow, heat transfer and chemistry of PCR microreactors have been applied to different microreactor designs. The tools are coupled to a controller software for thermal control of the virtual [...]

The Quantum-Point-Contact Spin Filter

Gilbert M.J., Bird J.P., Arizona State University, US

We describe an electron filter that exploits the known transmission properties of quantum point contacts to allow local and tunable control of the spin polarization in a semiconductor. When properly configured, the conductance of this [...]

An Approach to Quantum Correction in Monte Carlo Device Simulation

Winstead B., Tsuchiya H., Ravaioli U., University of Illinois at Urbana-Champaign, US

A particle-based approach coupled with quantum potential corrections is very attractive for practical simulation of nanoscale semiconductor devices. We present here a quantum correction approach derived from a simplification of the Wigner function transpo

Spin Dependent Boundary Conditions and Spin Splitting in Cylindrical Quantum Dots

Li Y., Liu J-L., Voskoboynikov O., Liu J-L., Lee C.P., Sze S.M., National Chiao Tung University, TW

To study a spin dependence of the electron energy states in tree dimensional cylindrical semiconductor dots we consider theoretically the spin-orbit interaction impact on the electron quantum con...nement in the dots. We solve the problem [...]

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

Towards a Compact Scattering Model for Nanoscale MOSFETs

Rahman A., Ren Z., Rhew J-H., Lundstrom M.S., Purdue University, US

A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

Chen Y., Luo J., University of California-Berkeley, US

An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson's equation in both Cartesian and cylindrical coordinates [...]

Simulation of HgCdTe Double Layer Heterojunction Detector Devices

Hess G.T., Sanders T.J., Newsome G., Fischer T., Florida Institute of Technology, US

Mercury-Cadmium-Telluride (HgCdTe) diodes are used as detectors of long wavelength photons by interaction of the infrared radiation with the atomic lattice of the material, creating hole-electron pairs and subsequent photocurrents. Models for these physical phenomena [...]

Parallel Dynamic Load Balancing for Semiconductor Device Simulations on a Linux Cluster

Li Y., Lin S-S., Liu J-L., Lin S-S., Yu S-M., Liu J-L., Chao T-S., Sze S.M., National Chiao Tung University, TW

A parallel dynamic load balancing for 2-D and 3-D semiconductor device simulations is proposed. The hydrodynamic and drift diffusion models are discretized and solved with finite volume (box) and monotone iterative methods. Dynamic load balancing [...]