Papers – Page 688 – TechConnect Briefs

Process Aware Hybrid SPICE Models using TCAD and Silicon Data

Mahotin Y., Tirumala S., Lin X., Pramanik D., Synopsys, Inc., US

This paper describes the methodology for extraction of process dependant hybrid SPICE compact model parameters using calibrated TCAD data and measured Silicon data. Process dependence of electrical curves is, initially, estimated using TCAD data set. [...]

HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations

Iino Y., Pesic I., Silvaco Japan, JP

This paper presents HiSIM speed and convergence advantage against BSIM4 and PSP on a large variety of circuits such as memories, MPUs, PLLs, A/D and D/A converters, mixers etc.

SPICE Modeling of Hook Shaped Idsat Curve for I/O 2.5V MOS Transistors

Tan P.B.Y., Kordesch A.V., Sidek O., Silterra Malaysia Sdn Bhd, MY

In this paper, we demonstrated how we have modified the mobility equation to accurately model the I-V characteristics of I/O 2.5V MOS transistors. Our aim is to model the effect of mechanical STI stress in [...]

A Compact Model for Temperature and Frequency Dependence of Spiral Inductor

Xu Y.Z., Watt J.T., Altera Corporation, US

Spiral inductors fabricated using a 90nm CMOS process have been characterized and analyzed. The extracted series resistance increases with frequency and temperature. The extracted resistance temperature coefficient exhibits a strong dependence on operating frequency. It [...]

Methodology and Design Kit Integration of a Broadband Compact Inductor Model

Groves R., Gordon E., IBM, US

A physics-based broadband inductor model is presented that accurately captures geometry scaling, process statistics, and temperature dependence. The model utilizes an accurate and physical skin effect formulation, with substantial improvements over previous methods, along with [...]

An Approximate Explicit Solution to General Diode Equation

He J., Tao Y., Yang C., Feng M., Li B., Bian W., Chen Y., Peking University, CN

an approximate explicit solution for a normalized diode has been developed in this paper. The accuracy of the diode current calculation and its derivative prediction has also been verified compared with the result of the [...]

A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range

Klimach H., Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

Mismatch is the denomination of time-independent variations between identically designed components. In analog circuits, the spread in the dc characteristics of supposedly matched transistors results in inaccurate or even anomalous circuit behavior. Also, for digital [...]

An Efficient Sectionalized Modeling Approach for Introduction of

Milovanovic V., Mijalkovic S., Delft University of Technology, NL

Modeling of breakdown phenomena is becoming central problem in today's design of high-speed bipolar circuits. It is especially important for the output stages that should simultaneously provide speed and output signal power. To this end, [...]

Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., O’uchi S., Koike H., AIST, JP

We have proposed a compact model for four-terminal DG MOSFETs based on double charge-sheet model, with the velocity saturation effect as a function of carrier density profile inside the channel, with explicit handling of drain [...]

Compact Models for Asymmetric Double Gate MOSFETs

Morris H.C., Abebe H., Cumberbatch E.C., San Jose State University, US

Double-gate MOSFET's are one possible option to further extend CMOS scaling when planar MOSFET's have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is [...]