Papers – Page 523 – TechConnect Briefs

Effective Width Modeling for Body-Contacted Devices in Silicon-On-Insulator Technology

Khandelwal S., Tamilmani E., Shanbhag K., Watts J., IBM SRDC Bangalore, IN

Body-Contacted (BC) devices are extensively used in silicon-on-insulator analog circuits to avoid kink effect. This effect is not desirable as it changes gain of device suddenly. But to make body-contact special layout schemes are used. [...]

Dynamic Charge Sharing modeling for surface potential based models

Quenette V., Rideau D., Clerc R., Tavernier C., Jaouen H., ST Microelectronics, FR

Technology tuning by design means have been recently pointed out. Particularly, the possibility of back bias polarization (VB) to tune the threshold voltage (VT) has been commonly adopted in advanced devices. As a consequence the [...]

Embedded non–volatile memory study with surface potential based model

Garetto D., Zaka A., Quenette V., Rideau D., Dornel E., Clark W.F., Minondo M., Tavernier C., Rafhay Q., Clerc R., Schmid A., Leblebici Y., Jaouen H., STMicroelectronics, FR

Coupling coefficients calculation is known to be a critical issue in Non-Volatile Memory cell compact modelling. To this purpose, the accuracy of the capacitive network method can be significantly improved using the charge balance method, [...]

HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization

Sadachika N., Kusu S., Ishimura K., Murakami T., Kajiwara T., Hayashi T., Nishikawa Y., Yoshida T., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFETs are considered to be suitable for high performance as well as low power applications and its developments are tend to go toward the thinner SOI films to enhance the device characteristics. Thus compact models [...]

Analytic MOSFET Surface Potential Model with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects

Song Y., He J., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Peking University, CN

An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, and inversion effects is derived from the basic MOS device physics and its solution result is also discussed in this paper. By [...]

Interface Traps in Surface-Potential-Based MOSFET Models

Chen Z., Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Nanyang Technological University, SG

Surface or interface properties along the surface channel region have great influences on the MOSFET characteristics. The interface-trap density increases during the repeated program-erase cycling of non-volatile floating-gate and SONOS memory transistors. Thus, the compact [...]

What is a Transistor?

Sah C., Jie B., University of Florida, US

After 75 years of learning vacuum tube and solid state electronics in three human generations, we now come to the end of the complete understanding of what is a transistor. It is far beyond, eight [...]

Effects of Memories of Polarization Interactions during Particle Transport Induced by One Gradient AC Electric Field

Shen Y., Tada S., Qiu Z., The City College of the City University of New York and New York Center for Biomedical Engineering, US

On the Nanotech 2008 in Boston, we reported our experimental observations of the particle instability and island-like structures in the suspension of poly alpha olefin particles and corn oil when the suspension was exposed to [...]

Particle Transport in Magnetophoretic Microsystems

Furlani E.P., University at Buffalo, US

Magnetophoretic microsystems are finding increasing use in biotechnology and biomedicine for applications such as bioseparation and immuno-assays. These microfluidic systems typically contain embedded elements that produce a magnetic field distribution within a microchannel. This applied [...]

A Hydrophobicity Controlled Nanofluidic Pump

Liu H., Dharmatilleke S., Tay A.A.O., Institute of Materials Research and Engineering, SG

interfacial energies in the system. Many methods for modulation of surface tension to manipulate fluids in micro or nano scale have been studied and reported, including the mechanical (surface roughness effect), chemical (electrochemical effect), opto- [...]