Papers – Page 1002 – TechConnect Briefs

Direct Write Technology as a Tool to Rapidly Prototype Patterns of Biological and Electronic Systems

Ringeisen B.R., Chrisey D.B., Piqué A., Krizman D., Brooks M., Spargo B., Naval Research Laboratory, US

The full potential of modeling and simulations is only realized when it is based on experimental results under varied conditions and systems. A single tool to rapidly prototype electronic and biological circuits would enhance the [...]

Mechanical Property Measurement of Thin-film Gold Using Thermally Actuated Bimetallic Cantilever Beams

Pamula V.K., Jog A., Fair R.B., Duke University, US

We describe a method for estimating the Young's modulus of thin-film gold deposited on the poly2 layer in the MUMPS process is described. An optical detection system employing position sensitive detectors (PSD) is built to [...]

Parameter Extraction for Surface Micromachining Using Eelectrical Characterization of Sensors

Maute M., Kimmerle S., Franz J., Hauer J., Schubert D., Krauss H.-R., Kern D.P., Robert Bosch GmbH, DE

This paper presents a novel methodology for the extraction of process dependent geometrical parameters of surface micromachined sensors. This approach is based on the electrical measurement of static capacitance-voltage characteristics of the sensor element on [...]

3-D Computational Modeling of RF MEMS Switches

Espinosa H.D., Fischer M., Zhu Y., Lee S., Northwestern University, US

Young's modulus and residual stress state of freestanding thin membranes are characterized in this work by means of wafer level experimental techniques. RF MEMS Switches manufactured by Raytheon Systems Co. are investigated using a new [...]

Stress Measurement in MEMS Devices

Starman Jr. L., Busbee J., Reber J., Lott J., Cowan W., Vandelli N., Wright-Patterson AFB, US

Due to the unique structure and small scale of Micro-Electro-Mechanical Systems (MEMS), residual stresses during the deposition processes can have a profound affect on the functionality of the MEMS structures. Typically, material properties of thin [...]

Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM Cell

Takemura Y., Osada K., Yagyu M., Yamaguchi K., Ushio J., Maruizumi T., Hitachi Ltd., JP

Employing Green's function method, we analyzed the 3D capacitance for the hole interconnect structure in an SRAM cell. We found novel 3D effects as follows; (1) via connection increases the capacitance of parallel lines, (2) [...]

Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

Scheiblin P., Roger F., Poncet D., Laviron C., Holliger P., Laugier F., Guichard E., Caire J.P., LETI, FR

In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) [...]

Finite Element Analysis in the Development of MEMS-based Compound Grating (MCG)

Yao Y., Castracane J., Xu B., Olson S., Eisden J.V., University at Albany-SUNY, US

This paper presents the development of the 1 mm ruled MEMS-based Compound Grating (MCG) in which the structural material of the rulings is SiO2 coated with Cr/Au as the top electrode. The MEMS simulation package [...]

Modeling and Simulation on Two Passive Feedback Methods to Obtain Large Travel Range of Electrostatic Micro Mirrors

Wu X.T., Xiao Z.X., Zhe J., Farmer K.R., New Jersey Institute of Technology, US

This paper demonstrates two passive feedback methods to obtain increased travel range in electrostatic micro actuators directly in the electrostatic domain. The first method is modeled as a series capacitor loop in which an integrated [...]

Eigenvalue Analysis of Tunable Micro-mechanical Actuator

Lee W-S., Kwon K-C., Kim B-K., Cho J-H., Youn S-K., KAIST, KR

An eigenvalue analysis of a tunable micro-mechanical actuator is presented. The actuator is modeled as a continuum structure. The eigenvalue modified by the tuning voltage is computed through the linearization of the relation between the [...]