parameter extraction – TechConnect Briefs

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

Abebe H., Tyree V., Cockerham N.S., USC/ISI MOSIS, US

The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction [...]

Diode Parameter Extraction by a Linear Cofactor Difference Operation Method

Ma C., Li B., Liu F., Chen Y., Zhang L., Zhang X., Liu F., Feng J., He J., Zhang L., Zhang X., Peking University, CN

The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, [...]

Compact Iterative Field Effect Transistor Model

Shur M.S., Turin V., Veksler D., Ytterdal T., Iñiguez B., Jackson W., Rensselaer Polytechnic Institute, US

Compact models for field effect transistors should satisfy two conflicting requirements. On one hand, they should be simple enough and should contain a small number of physics-based parameters to be suitable for parameter extraction. On [...]

Physical Modeling of Substrate Resistance in RF MOSFETs

Han J., Je M., Shin H., Korea Advanced Institute of Science & Technology, KR

A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances [...]

HiSIM-1.2: The Effective Gate Length Validation with the Capacitance Data

Iino Y., Silvaco Japan, JP

HiSIM-1.2 model parameter extraction and the resulted fit for the current voltage characteristics were reported at WCM-2004 (Boston, MA, 2004). The measurement curves were reproduced well. However, the Cgc (the gate to the shorted source/drain) [...]

A Robust Approach for Estimating Diffusion Constants from Concentration Data in Microchannel Mixers

Coelho C.P., Desai S., Freeman D., White J.K., Massachusetts Institute of Technology, US

In this paper we present a robust and geometry independent method for the estimation of diffusion coeffients of solutes from image data. Our diffusion coefficient estimation algorithm works in two steps. First, given the device [...]

Application of MCLC Method for Estimating the Parameters of MEMS Sensors

Colinet E., Juillard J., Nicu L., SUPELEC, FR

An original method for estimating the parameters of MEMS sensors is presented. It is based on the measurement of binary oscillations appearing at the system's output when a discrete-time relay feedback is used: the parameters [...]

SOS Gate Capacitance Modeling

Morris H.C., Cumberbatch E.C., Abebe H., San Jose State University, US

A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]

Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions

Mahotin Y., Lyumkis E., Integrated Systems Engineering, Inc., US

The first successful automatic extraction of BSIM3/4 model parameters based on numerical optimization of a functional, which includes penalty functions, is reported. The penalty functions always keep the values of the model parameters within a [...]

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Wang S.C., Huang G.W., Chen K.M., Peng A.S., Tseng H.C., Hsu T.L., National Nano Device Laboratories, TW

In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed [...]