parameter extraction – Page 2 – TechConnect Briefs

A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology

Iino Y., Silvaco Japan, JP

This paper reports HiSIM-1.2 Spice model parameter extraction for a practical 90 nm technology devices. The extraction sequence with the measurement data will be exhibitted. The number of optimized HiSIM parameters were only 19 out [...]

Extraction of Extrinsic Series Resistance in RF CMOS

Alam M.S., Armstrong G.A., The Queen’s University of Belfast, UK

An analytical approach for parameter extraction for CMOS incorporating substrate effect has been presented. The method is based on small-signal equivalent circuit valid in all region of operation, which uniquely extract extrinsic resistances used to [...]

Practical Techniques for Measuring MEMS Properties

Clark J.V., Garmire D., Last M., Demmel J., Govindjee S., Berkeley Sensor and Actuator Center, US

We describe simple test structures and practical analysis techniques to measure properties of MEMS devices. Our structures are designed to test many quantities using simple electric probes in a minimal chip area. We analyze differences [...]

Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology

Lin J., Kiat Seng Y., Jian Guo M., Manh Anh D., Nanyang Technological University, SG

The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are [...]

Application of Genetic Algorithm to Compact Model Parameter Extraction

Cai X., Wang H., Gu X., Gildenblat G., Bendix P., Penn State University, US

The total number of model parameters in compact MOSFET models is usually between 50 and 300, necessitating an elaborate extraction process. Gradient-based optimization techniques were found to be useful but somewhat limited in their scope. [...]

Physical Modeling of Substrate Resistance in RF MOSFETs

Han J., Je M., Shin H., Korea Advanced Institute of Science & Technology, KR

A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances [...]

Adaption of the 3w-Method for Testing of MEMS

Raudzis C., Schatz F., Wharam D., Corporate Research, Robert Bosch GmbH, DE

Automated wafer level testing of MEMS requires methods to measure geometry and material related parameters by purely electrical means. The three omega method to measure the thermal conductivity seems to be appropriate for this task. [...]

Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction

Chiah S.B., Zhou X., Lim K.Y., See A., Chan L., Nanyang Technological University, SG

This paper demonstrates a physically-based approach to parameter extraction of the compact Ids model we have developed for deep-submicron technology development. A two-iteration parameter-extraction scheme is described, which improves the previous one-iteration approach. Parameter calibration [...]

Methodology for Model Generation with Accuracy from DC to RF

Zhang X., Williams M., Liu Z., Celestry Design Technologies, US

This paper presents an example modeling flow for generating a RF CMOS model. Initially, the objectives of this modeling approach are analyzed. Then issues in test structure design are discussed. In the section of model [...]

Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Zhou X., Nanyang Technological University, SG

This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing [...]