noise – Page 2 – TechConnect Briefs

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

Enz C.C., Roy A.S., Swiss Federal Institute of Technology, Lausanne (EPFL), CH

This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise [...]

Effects of Scaling on Modeling of Analog RF MOS Devices

Cao S., Dutton R.W., Liu Y., Oh T.Y., Tornblad O., Wu B., Stanford University, US

This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence [...]

Thermal Noise and Bit Error Rate Limits in Nanoscale Memories

Forbes L., Mudrow M., Wanalertlak W., Oregon State University, US

Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Havens R.J., Klaassen D., Scholten A.J., Tiemeijer L.F., van Langevelde R., Venezia V.C., Zegers-van Duijnhoven A.T.A., Philips Research Laboratories Eindhoven, NE

The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]

Nanotube Stochastic Resonance: Noise–enhanced Detection of Subthreshold Signals

Kosko B., Lee I.Y., Liu X., Zhou C., University of Southern California, US

Noise can help signal detection at the nano-level. Experiments on a single-walled carbon nanotube transistor confirm that a threshold is sufficient for a nondynamical system to exhibit stochastic resonance: a judicious amount of noise can [...]

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Arnaud A., Galup-Montoro C., Klimach H., Schneider M.C., Universidade Federal de Santa Catarina, BR

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

Casinovi G., Georgia Institute of Technology, US

This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources [...]

Keywords: noise

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

Effects of Scaling on Modeling of Analog RF MOS Devices

Thermal Noise and Bit Error Rate Limits in Nanoscale Memories

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Nanotube Stochastic Resonance: Noise–enhanced Detection of Subthreshold Signals

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

Noise Modeling with MOS Model 11 for RF-CMOS Applications

RF MOSFET Noise Parameter Extraction and Modeling

RF Applications of MOS Model 11