mobility – TechConnect Briefs

Fluorescent quantum dot as model imaging probe for studying plant uptake, systemic mobility, localization in plant tissue and potential fate of ultra-small nanoparticles

Das S., Tharkur J., Tetard L., Gesquiere A., Santra S., University of Central Florida, US

Semiconductor fluorescent quantum dots (Qdots) are popularly used as bioimaging taggants in live cell imaging and spectroscopy. In recent years, Qdots taggants are emerging in agricultural applications. Studies are primarily focused on nanotoxicity of ultra-small [...]

Agglomerates and Aggregates: Number and Size of Primary Particles from in-situ Mass-Mobility Measurements

Eggersdorfer M.L., Gröhn A.J., Sorensen C.M., McMurry P.H., Pratsinis S.E., ETH Zürich, CH

Gas-borne nanoparticles generated at high temperatures undergo coagulation forming agglomerates (physically-bound particles) and aggregates (chemically- or sinter-bound particles). The structure of such particles influences their transport, light scattering, effective surface area and density. Real-time characterization [...]

Mobility Effects on WCDMA Receivers in Indoor Areas

Alhloul S., Ahmad Alzahrani F., Albaha University, SA

This Paper presents important results in analysing the effects of mobility on WCDMA receivers. It takes a completly different apprach in translating the effects of mobility on WCDMA receivers. The mobility here is translated to [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN

A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

Reyboz M., Martin P., Rozeau O., Poiroux T., CEA-LETI, FR

We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. [...]

Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

Hariharan V., Thakker R., Patil M.B., Vasi J., Rao V.R., IIT Bombay, IN

In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility [...]

Modeling of gain in advanced CMOS technologies

Spessot A., Gattel F., Fantini P., Marmiroli A., STMicroelectronics, IT

The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single [...]

Keywords: mobility