mobility – Page 2 – TechConnect Briefs

An Improved MOS Transistor Model with an Integrated Mobility Model

Hauser J.R., N.C. State University, US

A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed [...]

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]

Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs

Nguyen C.D., Jungemann C., Neihues B., Meinerzhagen B., Sedlmeir J., Molzer W., ITEM-University of Bremen, DE

In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]

Measurements and Modeling of Mobility in Ultra-Thin SOI

Mastrapasqua M., Esseni D., Fiegna C., Agere Systems, US

We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm [...]

MEMS Simulation in Heavily Doped Silicon Devices

Matsuda K., Kanda Y., Naruto University of Education, US

Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent [...]

Simulation for Low Temperature Coefficient Design of Piezoresistive and Hall Sensors

Matsuda K., Kanda Y., Naruto University of Education, JP

Simulation for the temperature coefficient of piezoresistive and Hall sensors is presented. Carrier and ionized impurity concentrations in the n-type silicon gage are calculated from the charge balance equation by applying Newton iteration scheme. The [...]

Simulations for Optimized Piezoresistors

Mladenovic D., Vasileska D., Motorola, US

As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused [...]