We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. In this paper, we present the model with adapted mobility degradation and velocity saturation models.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 881 - 884
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling