kinetic Monte Carlo – TechConnect Briefs

Kinetic Monte Carlo Study on Carbon Trapping Effect with Pre-amorphized Silicon

Park S., Cho B., Won T., Inha University, KR

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implant on the pre-amorphization implant (PAI) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant [...]

Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate

Park S.Y., Cho B-G, Won T., Inha University, KR

We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant [...]

Kinetic Monte Carlo Study on Silicon Pre-Implant Technique

Kim J-S, Kim Y.K., Kim J-S, Kim Y.K., Yoon K-S, Won T., Inha univ., KR

In this work, we investigated the effect of Si pre-implantation on the low energy B implant and boron activation enhancement during the post-implant annealing process using KMC. For investigating Si pre implantation effect, Si implantation [...]

Minimized atomistic model (MAM) of BmIn cluster and the effect of Ge pre-amorphization implant (Ge-PAI) on boron diffusion

Yoo J-H, Yoon K-S, Hwang C-O, Yoon K-S, Kim J-S, Won T., School of Engineering, National IT Research Center for Computational Electronics, Inha University, KR

In this paper, we report on our minimized atomistic model (MAM) composed of the evolution path from B2I to B3I for describing kinetic Monte Carlo (KMC) in boron diffusion. MAM, which is based on the [...]

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes

Vasenkov A.V., Fedoseyev A.I., Kolobov V.I., Hong Ki-Ha, Choi H.S., Kim J., Kim K.H., Kim J., Kim K.H., Lee H.S., Shin J-K, CFD Research Corporation, US

The current rapid development of nanotechnology has created a significant interest to predict the behavior of materials from the atomic to the engineering scales. However, it was found that such prediction is a very challenging [...]

Kinetic Monte Carlo Simulation of Defect-Mediated Organization in Quantum Dot Self-Assembly

Gao D., Kaczynski A., Jaszczak J.A., Michigan Technological University, US

A good understanding of quantum dot (QD) self assembly not only has the potential to augment standard materials patterning technologies but also has applications in industrial nanostructure fabrications. Many observations and insights about self-assembled quantum [...]

Multi-Scale Modeling of Processing of Carbon Nanotubes

Choi H.S., Kim J., Kim K.H., Hong K-H, Kim J., Kim K.H., Lee H.S., Shin J-K, Vasenkov A.V., Fedoseyev A.I., Kolobov V., Samsung Advanced Institute of Technology, KR

The current rapid development of nanotechnology has created a significant interest to predict the behavior of materials from the atomic to the engineering scales. However, it was found that such prediction is a very challenging [...]

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

Seo J., Hwang C-O, Kwon O., Kim K., Won T., School of Engineering, Inha University, KR

In this paper, we report a lattice-free kinetic Monte Carlo (KMC) result of boron diffusion at low temperatures 450o and 550o with vacancy + interstitialcy mechanism or vacancy + kick-out one with dilute self-interstitials (I) [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]