Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

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In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed while the kinetic Monte Carlo (KMC) diffusion model was used for the dynamic annealing between cascades. The distribution of dopants during the ion implantation was calculated from the MD approach. The calculation has been performed for B with energies down to 100eV and dose 11014 ions/cm2. The B, As, and Ge implant has been simulated with the energies of 0.5, 1, 2, 4, 8, and16 keV and with dose 11014 ions/cm2 into Si , respectively.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: March 7, 2004
Pages: 133 - 136
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 0-9728422-9-2