ion implantation – TechConnect Briefs

Combining a Fluoroalkylsiloxane and Ion Implantation for Hydrophilic/Hydrophobic Patterning

Cook M.J., Johnston J.H., Leveneur J., Victoria University of Wellington, NZ

We present a novel method of producing hydrophilic/hydrophobic patterning on several different substrates using a novel two-step process. The developed process involves a simple surface functionalization with a fluoroalkylsiloxane (FAS), followed by masked ion implantation. [...]

Silver Precipitation in Energy-Scavenging Aluminum Nitride Resonators

Alleyne F.S., Ford M., Gronsky R., Yen T.-T., Pisano A.P., University of California-Berkeley, US

Despite more than a decade of experience in manufacturing of nanoelectromechanical systems (NEMS) incorporating piezoelectric elements, modern devices are still plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report an atomistic simulation approach for sub-50nm gate length FETs. The proposed atomistic approach consists of the coupling the molecular dynamics (MD) simulations of the collision cascades for ion implantation process [...]

Microstructure Changes Induced by Low-energy High-temperature Nitrogen Ion Implantation on Vanadium-Titanium Alloys

Varela M., García J.A., Rodríguez R., Ballesteros C., Univ. Carlos III de Madrid, ES

A detailed structural characterization of unimplanted and low-energy, nitrogen implanted V5at.%Ti alloy is presented. The alloys were produced by repeated arc melting in a high-purity He atmosphere. Samples were nitrogen-implanted at 1,2 kV and 1 [...]

Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

Rábag F., Mandelis A., Salnik A., University of Toronto, CA

B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]

Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

Rábag F., Mandelis A., Salnik A., University of Toronto, CA

B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]

Modeling a Growth Instability in Stressed and Ion-Implanted Doped Silicon

Phan A-V, Kaplan T., Gray L.J., Barvosa-Carter W., Aziz M.J., Oak Ridge National Laboratory, US

The effects of rate-enhancing dopants and externally applied stress on interfacial growth during silicon crystallization are modeled using advanced numerical methods. The boron doped crystalline Si is modeled as an isotropic linear elastic solid, and [...]

Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

Scheiblin P., Roger F., Poncet D., Laviron C., Holliger P., Laugier F., Guichard E., Caire J.P., LETI, FR

In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) [...]

Robust Ion-Implantation Process Design through Statistical Analysis

Sudhama C., Thoma R., Morris M., Christiansen J., Lim I-S., Motorola Digital DNA Labs, US

In this work, for the first time, we present a TCAD methodology to rigorously account for statistical variations due to these random process errors (inherent in all semiconductor processes), and thereby design a robust ion-implantation [...]