Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

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B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1×1011 – 1×1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection Demodulation (CMRD) was done. It was found that the CMRD technique can significantly enhance the resolution of PTR response curves from P+ ion implanted wafers in cases where conventional square wave frequency scans were totally or partially unable to resolve the dose. The dose resolution improvements afforded by the CMRD technique may be important toward better control of the ion implantation process in electronic devices, in a dose range which has traditionally been difficult to monitor optically owing to the effects induced by the early stages of the amorphization process in the implanted layer.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 450 - 453
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1