BSIM – TechConnect Briefs

Compare and Contrast HiSIM-LDMOS and BSIM based compact model of High Voltage MOSFETs for Analog Applications

Young A., Hall J., Luo Z., Xiao Y., Connerney D., Fairchild Semiconductor, US

A pair of scalable spectre models, one utilizes the Surface Potential based HiSIM-LDMOS model, and the other, the conventional Vth-based BSIM3v3 model, were extracted based on a test vehicle designed with both Drain-Extended CMOS and [...]

LINFET: A BSIM class FET model with smooth derivatives at Vds=0

Wagner L., Olsen C.M., IBM Systems Technology Group, US

The linearity of compact transistor models near Vds=0 is important for designing RF circuits. Currently compact models such as BSIM3/4 have problems around this bias point due to discontinuities in the derivatives. Recently, the PSP [...]

A Versatile Multigate MOSFET Compact Model: BSIM-MG

Hu C., Dunga M., Lin C.H., Lu D., Niknejad A., University of California-Berkeley, US

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the [...]

A Simple Yet Accurate Mismatch Model For Circuit Simulation

Jin Z., Lee Y.M., Watts J.S., Bonaccio A.R., Schroer G.J., Pai N.G., IBM, US

As technology scales, mismatch between a pair of transistors becomes a more and more critical issue for technology development and circuit designs. Scaling also increases the complexity of compact device modeling. Sophisticated models are usually [...]

BSIM4 and BSIM Multi-Gate Progress

Dunga M.V., Lin C.H., Xi X., Chen S., Lu D.D., Niknejad A.M., Hu C., UC-Berkeley, US

Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

Engineering BSIM for the Nano-Technology Era and Beyond

Chan M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents the current status of the forth generation BSIM model and issues of modeling CMOS based devices with nanometer dimensions. Due to the divergence of device structures in sub-0.1 m gate length, it [...]