This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimensions have to be incorporated to describe the device operation accurately. A flexible quasi-Femi potential core model is described to achieve both physical accuracy and extendibility.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 270 - 273
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling