1/f noise – TechConnect Briefs

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

Wei C.Q., Xiong Y.Z., Zhou X., Nanyang Technological University, SG

1/f noise model of long channel lightly-doped FinFET biased in weak inversion has been described using Hooge’s theory. From the drain current equation and the channel conductance expression, the total number of carriers under the [...]

Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS

Xiong Y.Z., Lo G.Q., Loh W.Y., Shi J.L., Yu M.B., Loh W.Y., Kwong D.L., Institute of Microelectronics, Singapore, SG

This study presents comprehensive characterization of Schottky-diode in standard CMOS on its DC, low-frequency and RF noise performance. Random-telegraph-signal (RTS) and 1/f noise have been characterized, along with RF noise, power performances analysis. Results showed [...]

The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs

Sadachika N., Yusoff M.Md., Uetsuji Y., Bhuyan M.H., Kitamaru D., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Weiss L., Feldmann U., Baba S., Graduate School of Advanced Sciences of Matter, Hiroshima University, JP

Fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is developed. HiSIM-SOI solves surface potentials at all three SOI-surfaces along the depth direction self-consistently. Besides comparison to measured I-V characteristics, the model is verified with 1/f noise [...]

1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

Fu H., Kniffin M.L., Watanabe G., Masquelier M.P., Whitfield J., Motorola, Inc., US

This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion [...]