1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

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This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion mode nMOSFET. Due to the depletion mode nature of both surfacemicromachined suspended gate FET and standard FET, 1/f noise decreases as the gate bias approaches to tne tbreshold voltage. 1/f noise component can be modeled using the standard SPICE type of equation. The derived model can be used directly in the optimization of suspended gate transducer design.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 186 - 189
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3